Main Article Content
Heat Flow in a Finite Isolated Pulsed Avalanche Semiconductor Diode Heat Sink for Short-Term Applications
Abstract
An analytical time solution of temperature rise of a finite heat sink under adiabatic boundary, conditions is proposed for partial system applications requiring short-term and low duty operation of pulsed high-power high-efficiency avalanche semiconductor devices. The temperature rise as a function of the heat sink size is computed, and useful practical design curves for a specified operation time presented.