Optimization of insulated HfO2 dielectrics of GaN/InN/GaN/ In0.1Ga0.9N enhancement mode of MIS-HEMT heterostructure for high frequency power amplifier applications

Abstract

In this paper, the enhancement-mode operation of the hetestructure of GaN/InN/GaN/In_0.1Ga_0.9N of the Metal Insulator Semiconductor High Electron Mobility Transistor (MIS-HEMTs) device having lnN-channel was investigated. The effect of scaling the device dimensions of Metal Insulator, such as the dielectric thickness of HfO₂ and the channel lengths, on the electrical performances was analyzed and compared to the currently used heterostructure. The numerical simulation of synopsis TCAD used showed a significant improvement in the electrical properties of the device that achieved a threshold voltage (V_T) = 0.828 maximum drain current of 1.77 A/mm V, transconductance (g_m) of 2.29 S.mm⁻¹, lowest ON-state resistance (R_ON) of 0.21 Ω.mm, and along with high-frequency performance achieving f_T/ f_max of 98 GHz/129 GHz and 200 GHz/ 360 GHz respectively. The simulations also showed that this scaled GaN/ InN/ GaN/ In_0.9Al_0.1N heterostructure MIS-HEMT is an excellent substitute to the currently used MIS-HEMTs for delivering high power density and frequency at RF/power amplifier applications.

Keywords: Enhancement mode, Hydrodynamic simulation, InN channel, MIS-HEMT, In_0.9Al_0.1N barrier/buffer, HfO₂, TCH, Transconductance