Variational effect of elevation on the range of energetic boron ions in an amorphous silicon target

Abstract

The work aims at exploring the effects of varying implantation elevation on the
penetration depth (Range) of energetic ions in an amorphous target using SRIM-2008.03 simulation package. The range was observed to decrease from 229 Å to 118 Å with increasing elevation (0⁰ - 88⁰). The decrease in range was attributed to two distinct but simultaneous phenomena; the increase in surface backscattering of impinging ions due to head-on collision with target atoms and the decrease in number of vacancies created within the silicon crystal lattice due to the triggered cascade of collision events by adjoining silicon atoms.