Temperature variation effects on Carbon Nanotube Field Effect Transistor (CNTFET) based on simulation study

Abstract

Carbon Nanotube Field Effect Transistors (CNTFET) are promising Nano-scaled devices for implementing high performance and low power circuits. As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. The CNTs give a great opportunity of scaling the circuit design to the Nano regime. The aim of this research work is to study the temperature variation effects in carbon nanotube FET based on simulation study. A Nano device simulator called FETtoy was used to study the temperature variation effect, CNTFETs as channel materials with Ti0₂ as dielectric materials and gate control parameter 0.88. The scope of this research work covered low temperature range to high temperature range (273 K to 375 K) with other parameters such as; diameter of CNT (carbon nanotube), drain control and transport effective mass fixed. The various output parameters that were studied are drain current versus gate voltage, quantum capacitor versus gate voltage, drain induced barrier lowering (DIBL), threshold swing (S), On current (I_on), Off current (I_off), transconductance (g_m ), output conductance ( g_d), carrier injection velocity (v_inj), and Voltage gain (A_v). From the results obtained, carbon nanotube as channel material with Ti0₂, gate control 0.88 at room temperature (300 K) can be used to suppress the subthreshold effects in nanodevices.