Thermoluminescence from Silicon quantum dots using the model of interactive multiple traps system

Abstract

The effect of size variation on the intensity of thermoluminescence emission from spherical amorphous silicon quantum dots is investigated using the interactive multiple traps system model. The model consists of an active electron trap, a thermally disconnected deep trap, and a recombination center. Numerical simulations are carried out for quantum dots of diameters  to determine the thermoluminescence glow curve and relevant important kinetic parameters. It is found out that as the size of the quantum dots decrease, the intensity of the thermoluminescence signal increase, the peak temperatures almost remains constant independent of the size of the dots, and the glow curve seems to obey first-order kinetics. In addition, the symmetry factor, the order of kinetics as well as the instantaneous concentration of carriers in the traps and recombination center are numerically simulated. The results obtained may be used while fabricating dielectric compounds enriched with silicon contents for TL applications.