Minority carrier lifetime in monocrystalline, polycrystalline and amorphous silicon solar cells using photo-induced open-circuit voltage decay (ocvd) technique

Ulrich Stutenbäumer

doi:10.4314/sinet.v22i1.18131

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SINET: Ethiopian Journal of Science
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Published:

May 25, 2004

DOI:

10.4314/sinet.v22i1.18131

Article Details

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Vol. 22 No. 1 (1999)

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Articles

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Minority carrier lifetime in monocrystalline, polycrystalline and amorphous silicon solar cells using photo-induced open-circuit voltage decay (ocvd) technique

Ulrich Stutenbäumer

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eISSN: 2520-7997
print ISSN: 0379-2897

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