Fabrication Of Cu2O Backwall Schottky Barrier Solar Cell

Abstract

Simple and less economical method of determing the mass of Cu₂O on Cu as well as the thickness of Cu₂O on Cu was investigated. The variations of open circuit, voltage, Voc, resistivity, and short circuit, current, Isc with the thickness of Cu₂O on Cu were investigated. The best Voc (93.05mV) obtained in this study was for the cell thickness of 14μm and resistivity of 0.26Ωm. The highest value of the Isc obtained in this work is 23μ. Results further show that Isc increases with increasing thickness and resistivity of the cell.

Keywords: Short circuit current, resistivity, fill-factor, and shunt resistance.

Nigerian Journal of Physics Vol. 19 (1) 2007: pp. 49-54