Transport Properties Of Cu2SnS3 Thin Films

Abstract

A single source vacuum evaporation process has been employed to prepare thin films of Cu₂S_nS₃. Electrical Hall measurements using Van der Pauw technique have revealed that film resistivity was a strong function of the substrate temperature for film deposition. The activation energy for the resistivity was 0.268 eV for films deposited at 300 K, 0.162 eV for films deposited at 423 K and 0.059 eV for films deposited at 573 K. The Hall mobility was observed to decrease with an increase in temperature due to grain boundary scattering. Room temperature mobility was 110 cm²V^-1s^-1, reducing to 28 cm²V^-1s^-1 at 593 K. The barrier height within the grain was determined to be 0.051 eV.

Key words: Thin film, transport properties, vacuum evaporation, activation energy, Hall mobility

Nig. J. of Pure & Appl. Physics Vol.3 2004: 75-78