Electrical Properties of Antimony (Sb) Metal Contacts to Silicon (Si) Thin Films

Abstract

The study investigates the behaviour of the contacts formed by Antimony (Sb) metal to Silicon (Si) thin films for electric field values 10 – 100V/m. Measurements of I-v characteristics were obtained at temperatures 303, 313, 323, 333, 343 and 353K respectively. The results show linear I – V relationship over a specified range of voltage (10 – 60V) and at higher voltage (>60V), there was deviation from linear behaviour for each of the temperature. The electrical surface conductance of the samples increases with temperature while the saturation current density decreases with temperature. Nonetheless, the study revealed very little increase in the values of the barrier heights with increasing temperature.


(Nigeria Journal of Pure and Applied Physics: 2003 2 (1): 40-44)