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Published:
Mar 15, 2013DOI:
10.4314/just.v32i3.2Keywords:
Amorphous semiconductor hopping mobility edge
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The copyright of a submitted article is only transferred to the publishers if and when the article is accepted for publication. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system or transmitted in any form or by any means, electronic, electrostatic, mechanical, photocopying, recording or otherwise without the prior written permission of the publishers.
Main Article Content
Conduction Mechanism in Amorphous As2S3
Abstract
The conduction mechanism in amorphous As2S3 has been studied by investigating the variation of the electrical resistivity over the temperature range 300 – 450 K. The electrical resistivity is characterised by a mobility gap of 2.15 eV over the temperature range investigated. The dc conductivity provides evidence of conduction by excitation of charge carriers into the band edges near the mobility edges. The results also give the possibility of conduction by a phonon-assisted hopping of polarons between localised states.
Keywords: Amorphous semiconductor, hopping, mobility edge
