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Published:
Dec 7, 2000Keywords:
Reliability Delta-doped Conventional MOSFET Subthreshold Transconductance Stress 2-D (Two Dimensional)
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The copyright of a submitted article is only transferred to the publishers if and when the article is accepted for publication. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system or transmitted in any form or by any means, electronic, electrostatic, mechanical, photocopying, recording or otherwise without the prior written permission of the publishers.
Main Article Content
Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets.
Abstract
A DC stress analysis has been performed to assess the reliability of delta – doped and conventional MOSFETSs. The experimental results and 2 – D computer simulations indicates that there is little variation in the threshold voltage, trans-conductance and drain current in the delta MOSFET due to stress than in conventional MOSFET
