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Published:
Jun 4, 1999Keywords:
Delta-doped Buried Channel MOSFET (d-BCMOSFET) Conventional MOSFET Drain Induced Barrier Lowering (DIBL) Subthreshold Speed Cut-Off Frequency
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The copyright of a submitted article is only transferred to the publishers if and when the article is accepted for publication. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system or transmitted in any form or by any means, electronic, electrostatic, mechanical, photocopying, recording or otherwise without the prior written permission of the publishers.
Main Article Content
Comparative Study of Sub-Micron Buried-Channel Delta Doped Mosfets
Abstract
In this work, the performance of a deep – submicron ᵟ doped MOSFET has been evaluated in terms of its conventional counterpart using 2 – D stimulation. The comparison was based on the scaling law relationships reported in the literature and relative data is given for subthreshold leakage currents, DIBL, speed and cut – off frequencies. A performance figure of merit indicates the conventional device out performs that performs that of the ᵟdoped MOSFET by 30%.
