Numerical simulation of hole injection in high barrier metal-semiconductor short diodes

Abstract

A numerical investigation is carried out on effects of minority carriers on the transport parameters of one-dimensional metal-semiconductor short diodes under highly injecting conditions. The results show that at a donor concentration N_d=10¹⁴ cm^-3 and total current density J=0.1 μAcm^-2, the hole injection ratio,λh , decreases rapidly by a factor of more than 80% within 2μm semiconductor layer from the interface. Furthermore, a comparison of the two-carrier model adopted in this work with the Schottky model reveals a discrepancy of 30% in the lnJ-V characteristics of a diode of 0.92 eV barrier height.



Journal of the Nigerian Association of Mathematical Physics Vol. 8 2004: pp. 69-74