Energy states in dilute InAs1-хBiх/InAs Single Quantum Well (SQW) laser

Abstract

In this paper, starting with the band engineering of the dilute bismide InAs_1-хBi_х/InAs, we investigated the room temperature emission wavelengths of InAs_1-хBi_х/InAs single quantum well (SQW). The results of our calculations reveal that the emission wavelengths of InAs_1-хBi_х/InAs fall in the range λ = 3.7- 5.1μm which can be tuned by the Bi mole fraction of the InAs_1-хBi_х/InAs well material between. This thus, offers a technologically important Mid Wave Infrared (MWIR) InAs_1-хBi_х/InAs lasers for varying applications.