Empirical study on the effect of temperature on the electrical parameters of Schottky diode using Cheung’s model

Abstract

An empirical study on the effect of temperature on some electrical parameters of Schottky diode contacts of three different metals, namely;  Chromium (Cr), Tungsten (W) and Molybdenum (M_o) with n – type Silicon and n – type Germanium using Cheung’s model is been analyzed. The electrical parameters are the saturation current (I_o); ideality factor (n); barrier height Φ_B ) and series resistance (R_s). Three different temperatures were chosen, 300 K, 310 K and 320 K. The range of values of the voltage used in the computation process are 0.09 V – 0.15 V. Results show that increase in temperature of most of the metal – semiconductor contacts is proportional to the saturation current and the ideality factor, but inversely proportional to the barrier height and the series resistance. This result agrees with some experimental outcomes, and to some extend shows the validity of the model used.

Keywords: Schottky Diode; Temperature; Saturation Current; Ideality factor; Barrier Height and Series Resistance.