Determination of spontaneous emission rate and carrier recombination channels in GaInAsSb/AlGaAsSb multiple quantum well laser diodes emitting near 2.3 μm

Abstract

In this paper, Amplified spontaneous emission spectra is used to extract the gain and internal loss of 2.3 μm narrow ridge-waveguide GaInAsSb-AlGaAsSb quantum well laser diodes by Cassidy’s method. The spontaneous emission intensity was extracted using the average value of the amplified spontaneous emission intensity. The dependence of the integrated spontaneous emission intensity on injection current has been studied. The results show that the current is dominated by radiative recombination at this emission wavelength.