High power and high external efficiency m-plane Ingan light emitting diodes

Abstract

High power and high efficiency non-polar, m-plane nitride light emitting diodes (LEDs) have been fabricated on low extended defect bulk m-plane GaN substrates. The LEDs were grown by metal organic chemical vapor deposition (MOCVD) using conditions similar to that of c-plane device growth. The output power and external quantum efficiency (EQE) of the packaged 300 x 300 Bm2
was 23.7mW and 38.9%, respectively, at 20 mA. The peak wavelength was 407 nm and <1 nm and a redshift was observed with change in drive current from 1– 20 mA. The EQE showed a minimal drop off at higher currents, where a 90 mA current had an EQE of 35%.

Keywords: GaN substrates, m-plane, LED, diodes, external quantum efficiency