ELEVATED TEMPERATURE EFFECTS ON THE ELECTRICAL PROPERTIES OF Bi METAL PROBE TO Si THIN FILM

Abstract

The effects of elevated temperatures on the electrical properties of Bi metal probe to Si thin films had been investigated for electric field values 10-100V/m. Measurements of current (I) – voltage (V) characteristics were obtained at temperatures 300,320,340,360,380 and 400K respectively. The results indicated linear I–V relationship over the voltage range 10 – 60V and at higher voltage (>60V) there was deviation from linearity and evidence of saturation was noticed at voltage close to 100V. The electrical surface conductance of the samples and the barrier heights increase with increasing temperature while the saturation current density decreases with increasing temperature. Hence, Bi metal probe have effects on the electrical properties of Si thin films at elevated temperatures.


KEY WORDS: Temperature, Electrical properties,Bi/Si, Conductance.


Global Jnl Pure & Applied Science Vol.10(1) 2004:217-221