Modelling and characterisation of transistors

Abstract

Models and characterisation of active devices that control the flow of energy operating within and outside the active region of the operating domain are presented. Specifically, the incremental charge carrier and Ebers Moll models of the bipolar junction transistor are presented and the parameters of electrical behaviour of the device at the terminals were measured and analysed. The parameters determined could be employed to evaluate input and output impedances, current, voltage and power gains of the device at appropriate operating points. The measured parameters compare favourably with published manufacturers' data to within 5%.

Keywords: Modelling Bipolar Junction Transistor


(Global Journal of Pure and Applied Sciences: 2003 9(2): 303-310)