Performance comparison of nanoscale double gate Ge and GaN finFETs

Abstract

This paper presents a comparative study of the impact of Short Channel Effects (SCEs); threshold voltage variation, subthreshold swing and drain-induced barrier lowering on both Ge and GaN FinFET devices. The analysis was carried out in the PADRE Simulator environment. The study also analyzes the transconductance and drive currents of these materials. The results reveal that the use of Ge as a channel material for FinFET devices can result in higher drive currents and transconductance compared to GaN-based devices. However, Ge-FinFETs are more prone to short-channel effects, which can impact their performance. On the other hand, GaN-based FinFETs show better immunity to short-channel effects, but their transconductance and drive currents are comparatively lower. This finding contributes valuable insights that can significantly advance the development and optimization of FinFET devices employing Germanium and Gallium Nitride as channel materials.