Dosimetric response evaluation and structural characterization of (SnO)x(TiO2)1-x thin film for gamma radiation detection and measurement

Abstract

Dosimetric response evaluation as well as structural Characterization of (SnO)_x(TiO₂)_1-x was successfully carried out using the aerosol-assisted chemical vapor deposition method. This research aimed to ascertain how X-ray radiation affected the (SnO₂)_x(TiO₂)_1-x thin film's I-V characteristics induced current for the range (for x = 0.0, 0.3, and 0.5) in a voltage range of 0 to 8 V. The method used for developing the manufactured (SnO₂)_x(TiO₂)_1-x thin films was aerosol assisted chemical vapour deposition. To evaluate the dosimetric response, three thin film samples with a homogeneous distribution were developed, evaluated, and analyzed. The XRD result revealed peaks that corresponded to SnO₂ and TiO₂, as well as the films' amorphous nature. With an increase in SnO₂ concentration, FESEM pictures show a reduction in crystalline size and film roughness. The thin film samples' cross-sectional FESEM image shows that the film thicknesses for TiO₂, (SnO₂)_0.3(TiO₂)_0.7, (SnO₂)_0.5(TiO₂)_0.5, and thin film are 2.33 μm, 2.73 μm, and 10.84 μm, respectively. The results of the I-V characteristics showed that electrical conductivity increased between 0 and 8 V. During irradiation with X-ray dosage (dose rate) ranging from 100 cGy (250 cGy/min) to 200 cGy (350 cGy/min) and a voltage range of 1.0 V to 8.0 V, the I-V characteristic measurements were obtained for all the thin film sensors. The current increases linearly with X-ray doses and dose rate for all thin-film sensors that are prepared for all the applied voltage. The thin films exhibit values of sensitivity (minimum detectable dose) between 7.12 x 10^-2 and 2.74 x 10^-3 mA.cm^-2.Gy^-1 (1.41 x 10² - 3.65 x 10⁵ mGy). The thin film material is an essential dosimetric material because this work demonstrated that X-ray radiation could lead to changes in microstructures.