Structural characterization and dosimetric response evaluation of (SnO2)0.3(TiO2)0.7 thin film

Abstract

This study investigates the effect of X-ray radiation on the I-V characteristics of (SnO₂)_0.3(TiO₂)0.7 thin film in a voltage range of 0- 8 The thin film was developed using the aerosol assisted chemical deposition technique. The amorphous character of the films was shown by the XRD spectra, which showed peaks corresponding to SnO₂ and TiO₂. Smooth surface morphology with tiny poses was indicated by the FESEM picture, and 2.73 μm film thickness was identified in the cross-sectional investigation. The I-V characteristics result indicates that the electrical conductivity changes throughout a range of applied voltages, from 0 to 8 V. The I-V characteristic measurements obtained during irradiation with X-ray dosage (dose rate) ranging from 100 cGy (250 cGy/min) to 200 cGy (350 cGy/min) and a voltage range of 1.0V to 8.0 V indicate that the current increases linearly with X-ray doses and dose rate. The thin film’s ability to undergo structural changes due to X-ray radiation makes it a valuable dosimetric sensor.