REVIEW A Study of a New Power Semiconductor Insulated Gate Bipolar Transistor (IGBT) Characteristics and its Application to Automotive Ignition

Kefa V O Rabah

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Journal / Discovery and Innovation / Vol. 9 No. 1 (1997) / Articles

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Vol. 9 No. 1 (1997)

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REVIEW

A Study of a New Power Semiconductor Insulated Gate Bipolar Transistor (IGBT) Characteristics and its Application to Automotive Ignition

Kefa V O Rabah

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