Influence of complexing agent (Na2EDTA) on chemical bath deposited Cu4SnS4 thin films

Abstract

The quality of thin film is influenced by the presence of complexing agents such as Na₂EDTA. The Cu₄SnS₄ thin films were deposited onto indium tin oxide glass substrate by chemical bath deposition method. The structural, morphological and optical properties of the deposited films have been studied using X-ray diffraction, atomic force microscopy and UV-Vis spectrophotometer, respectively. The XRD data showed that the films have a polycrystalline and orthorhombic structure. It also indicated that the most intense peak at 2q = 30.2° which belongs to (221) plane of Cu₄SnS₄. The film deposited with 0.05 M Na₂EDTA showed good uniformity, good surface coverage with bigger grains and produced higher absorbance value. The band gap energy varies with the variation of Na₂EDTA concentration which ranging from 1.56-1.60 eV. Deposition at concentration of 0.05 M Na₂EDTA proved to offer a reasonably good Cu₄SnS₄ thin film.

KEY WORDS: Chemical bath deposition, Complexing agents, Thin films, X-ray diffraction

Bull. Chem. Soc. Ethiop. 2010, 24(2), 259-266.